Carrier recombination in indium arsenide
- 1 May 1967
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 91 (1) , 151-155
- https://doi.org/10.1088/0370-1328/91/1/323
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Technique for the Measurement of Short Carrier LifetimesReview of Scientific Instruments, 1962
- Optical Properties of-Type Indium Arsenide in the Fundamental Absorption Edge RegionPhysical Review B, 1961
- Effect of Heat Treatment upon the Electrical Properties of Indium ArsenideJournal of Applied Physics, 1959
- Auger effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Temperature Dependence of Optical Absorption in-Type Indium ArsenidePhysical Review B, 1958
- Photoelectromagnetic Effect in Indium ArsenidePhysical Review B, 1957
- Effective Masses of Electrons in Indium Arsenide and Indium AntimonidePhysical Review B, 1957