High-linearity high-current-drivability ga0.51in0.49p/gaas misfet using ga0.51in0.49p airbridge gate structure grown by gsmb
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (11) , 518-520
- https://doi.org/10.1109/55.468286
Abstract
A novel structure Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET with an undoped Ga/sub 0.51/In/sub 0.49/P layer serving as the airbridge between active region and gate pad was first designed and fabricated. Wide and flat characteristics of g/sub m/ and f/sub max/ versus drain current or gate voltage were achieved. The device also showed a very high maximum current density (610 mA/mm) and a very high gate-to-drain breakdown voltage (25 V). Parasitic capacitances and leakage currents were minimized by the airbridge gate structure and thus high f/sub T/ of 22 GHz and high f/sub max/ of 40 GHz for 1 /spl mu/m gate length devices were attained. To our knowledge, both were the best reported values for 1 /spl mu/m gate GaAs channel FET's.Keywords
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