X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)
- 1 June 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 99 (2) , 169-183
- https://doi.org/10.1016/0169-4332(96)00450-3
Abstract
No abstract availableKeywords
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