Indium tin oxide ohmic contact to highly doped n-GaN

This publication has 9 references indexed in Scilit:

• High-transparency Ni/Au ohmic contact to p-type GaN
  Applied Physics Letters, 1999
• Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
  Applied Physics Letters, 1998
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
  Applied Physics Letters, 1997
• High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
  Applied Physics Letters, 1996
• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
  Applied Physics Letters, 1995
• Highly reliable operation of indium tin oxide AlGaInPorange light-emitting diodes
  Electronics Letters, 1994
• Schottky barrier photodetector based on Mg-doped p-type GaN films
  Applied Physics Letters, 1993
• High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
  Applied Physics Letters, 1993
• Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters
  Applied Physics Letters, 1992