Autodoping of epitaxial silicon layers (II) diffusion-induced autodoping
- 1 May 1985
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (5) , 635-644
- https://doi.org/10.1002/crat.2170200507
Abstract
No abstract availableKeywords
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- A competitive adsorption model of steady-state growth of a crystal from a lightly-doped meltJournal of Physics and Chemistry of Solids, 1963
- Junctions Produced by Growth Rate VariationPhysical Review B, 1952