Autodoping during the deposition of epitaxial Silicon layers from the gas phase (I). Autodoping from the gas phase
- 1 January 1982
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (9) , 1097-1104
- https://doi.org/10.1002/crat.2170170906
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (V). Incorporation of arsenicCrystal Research and Technology, 1980
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- Reduction of AutodopingJournal of the Electrochemical Society, 1975
- The Dependence on Deposition Conditions of the Dopant Concentration of Epitaxial Silicon LayersJournal of the Electrochemical Society, 1964
- Anomalous Impurity Diffusion in Epitaxial Silicon near the SubstrateJournal of the Electrochemical Society, 1962