AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
- 31 January 2007
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 298, 822-825
- https://doi.org/10.1016/j.jcrysgro.2006.10.185
Abstract
No abstract availableKeywords
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