A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
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- 23 September 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 50 (10) , 2015-2020
- https://doi.org/10.1109/ted.2003.816549
Abstract
Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying bias stress to the device. The collapse was suppressed by light illumination with energy smaller than the bandgap. The position dependence of the light illumination and the measurement of series source and drain resistances revealed that the collapse was caused by the surface states between the gate and drain electrodes, which captured electrons injected from the gate. The current collapse was eliminated by the passivation of the device surface with Si/sub 3/N/sub 4/ film.Keywords
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