Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy
- 1 March 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 112, 132-137
- https://doi.org/10.1016/s0169-4332(96)00990-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Step-flow growth and fractional-layer superlattices on GaAs vicinal surfaces by MOCVDJournal of Crystal Growth, 1991
- Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arraysApplied Physics Letters, 1990