Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfaces
- 1 March 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 160 (1-2) , 21-26
- https://doi.org/10.1016/0022-0248(95)00907-8
Abstract
No abstract availableKeywords
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