Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates

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Abstract
Molecular beam epitaxial growth conditions of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates are reported. Photoluminescence measurements of these structures showed linewidths slightly larger than previously reported for quantum wells grown on (100) and misoriented (111)B substrates, but much lower than observed and reported on nominally oriented (111)B substrates. Good surface morphology and optical properties were obtained by monitoring the specular beam intensity of the reflection high‐energy electron diffraction diagram during growth. Growth interruption at the interfaces was found to be detrimental for substrate temperatures higher than 610 °C.