Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°-misoriented (111)B substrates
- 23 November 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21) , 1705-1707
- https://doi.org/10.1063/1.98550
Abstract
The interface disorder in quantum wells (QW’s) grown by molecular beam epitaxy on 0.5°‐misoriented (111)B GaAs substrates was characterized by low‐temperature photoluminescence and by transmission electron microscopy. It was found that the abruptness of the heterointerface of (111)B QW’s is as sharp as that of (100) QW’s. The effect of growth interruption at a high substrate temperature of 720 °C on the interface disorder was also studied and was found to be detrimental.Keywords
This publication has 11 references indexed in Scilit:
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987
- Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxyApplied Physics Letters, 1986
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layerApplied Physics Letters, 1986
- High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layerJournal of Applied Physics, 1985
- Transmission electron microscope observation of lattice image of AlxGa1−xAs-AlyGa1−yAs superlattices with high contrastJournal of Applied Physics, 1985
- Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperatureApplied Physics Letters, 1985
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981