GaAs/AlAs trench-buried quantum wires with nearly rectangular cross sections grown by metalorganic chemical vapor deposition on V-grooved substrates

Publisher Website
Google Scholar
Abstract
GaAs trench‐buried quantum wires were fabricated by using U‐grooved AlAs trenches grown on V‐grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed by the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross‐sectional scanning electron microscope image of these trench‐buried structures showed GaAs wires about 20 nm wide and 20 nm thick. The growth of these wires is enhanced by the capture of Ga species into the trenches. Blueshifts and strong anisotropy of photoluminescence confirm two‐dimensional quantum confinement.