Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings

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Abstract
We report on the growth of dense lateral arrays of GaAs quantum wire structures, obtained by organometallic chemical vapor deposition (OMCVD) on GaAs substrates where a submicron grating has been lithographically defined and etched prior to deposition. The experiments were performed simultaneously on (100) oriented substrates, where the wires are virtually ‘‘isolated’’ from each other, and on substrates that are vicinal with respect to the (100) orientation, where the wires are ‘‘smoothly connected’’ by quantum wells. Transmission electron microscopy investigations allowed the study of the morphology of the resulting structures, which was related to the microscopic step nature of the starting surfaces and revealed important basic aspects of growth dynamics.