Hybrid Si molecular beam epitaxial regrowth for a strained Si1−xGex/Si single-quantum-well electroluminescent device
- 25 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (17) , 2414-2416
- https://doi.org/10.1063/1.110492
Abstract
An n‐type Si contact layer for an electroluminescent (EL) diode was successfully grown on a Si/Si1−xGex/Si single‐quantum‐well (SQW) structure by ‘‘hybrid’’ Si molecular beam epitaxy (MBE) for the first time. The hybrid MBE was performed by regrowing the Si contact layer in a solid‐source MBE chamber after transferring the SQW sample through air from a gas‐source (GS) MBE chamber, in which the starting SQW structure was grown. A (2×1) reconstruction was observed on a GSMBE‐prepared Si(100) surface even after the SQW sample was exposed to air for up to 15 h. An excellent quality of the EL device was evidenced by the sharpest emission lines ever reported in the EL spectra of SiGe system. The spectral features of the EL and photoluminescence were found to be almost identical, and a well‐resolved acoustic phonon replica was observed.Keywords
This publication has 13 references indexed in Scilit:
- High-temperature operation of strained Si0.65Ge0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxyApplied Physics Letters, 1993
- Observation of deep-level-free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid source Si molecular beam epitaxyApplied Physics Letters, 1992
- Spectral blue shift of photoluminescence in strained-layer Si1−xGex/Si quantum well structures grown by gas-source Si molecular beam epitaxyApplied Physics Letters, 1992
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992
- Reflection high-energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beamsJournal of Vacuum Science & Technology A, 1992
- Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wellsApplied Physics Letters, 1992
- Optical and structural investigation of SiGe/Si quantum wellsApplied Physics Letters, 1992
- Near-band-gap photoluminescence from pseudomorphic Si1−xGex single layers on siliconJournal of Applied Physics, 1992
- Surface reconstructions of Si(001) observed using reflection-high- energy-electron diffraction during molecular-beam epitaxial growth from disilaneApplied Physics Letters, 1991
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991