Problem of impurity states in narrow-gap lead telluride-based semiconductors
- 1 July 2004
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 80 (2) , 133-139
- https://doi.org/10.1134/1.1804224
Abstract
A review of recent results of experimental investigations devoted to studying unusual properties of impurity states in doped narrow-gap lead telluride-based semiconductors is presented. These results are analyzed in the framework of existing theoretical concepts.Keywords
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