Investigation of the 2D–3D transition of the band gap renormalization in GaAs
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 168-171
- https://doi.org/10.1016/0039-6028(90)90283-e
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- General relation between band-gap renormalization and carrier density in two-dimensional electron-hole plasmasPhysical Review B, 1987
- Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAsPhysical Review Letters, 1987
- Excitons formed between excited sub-bands in GaAs-Ga1-xAlxAs quantum wellsJournal of Physics C: Solid State Physics, 1985
- Subband-level renormalization and absorptive optical bistability in semiconductor multiple quantum well structuresSolid State Communications, 1984
- Electron-hole plasma in direct-gapAs and-selection rulePhysical Review B, 1984
- Universal behavior of exchange-correlation energy in electron-hole liquidPhysical Review B, 1982
- Electron Interaction Effects on Recombination SpectraPhysica Status Solidi (b), 1966