Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides
- 24 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 645-648
- https://doi.org/10.1016/0022-0248(89)90062-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Properties of Zn-Doped P-Type In0.53Ga0.47As on InP SubstrateJapanese Journal of Applied Physics, 1980