Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Porous silicon as a sacrificial materialJournal of Micromechanics and Microengineering, 1996
- Processing of Three‐Dimensional Microstructures Using Macroporous n‐Type SiliconJournal of the Electrochemical Society, 1996
- The Physics of Macropore Formation in Low Doped n‐Type SiliconJournal of the Electrochemical Society, 1993
- Using porous silicon as a sacrificial layerJournal of Micromechanics and Microengineering, 1993
- Porous silicon formation mechanismsJournal of Applied Physics, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy studyApplied Physics Letters, 1989
- Porous Silicon Formation and Electropolishing of Silicon by Anodic Polarization in HF SolutionJournal of the Electrochemical Society, 1989
- Fabrication of catheter-tip and sidewall miniature pressure sensorsIEEE Transactions on Electron Devices, 1982
- Etch Channel Formation during Anodic Dissolution of N-Type Silicon in Aqueous Hydrofluoric AcidJournal of the Electrochemical Society, 1972