Influence of surface electric field on the MOS capacitance of n-channel inversion layers in small gap semiconductors
- 16 May 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 59 (1) , K69-K74
- https://doi.org/10.1002/pssa.2210590169
Abstract
No abstract availableKeywords
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