Defect ordering in epitaxial α-GaN(0001)
- 15 December 1994
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (12) , 8195-8197
- https://doi.org/10.1063/1.357873
Abstract
The microstructure of nominally undoped epitaxial wurtzite‐structure α‐GaN films, grown by gas‐source molecular‐beam epitaxy, plasma‐assisted molecular‐beam epitaxy, and metalorganic chemical‐vapor deposition, has been investigated by transmission electron microscopy (TEM) and high‐resolution TEM. The results show that undoped α‐GaN films have an ordered point‐defect structure. A model of this defect‐ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.This publication has 15 references indexed in Scilit:
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