Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating
- 1 March 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (3) , 710-716
- https://doi.org/10.1109/16.661232
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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