Two-dimensional impurity bands at semiconductor heterostructure interfaces
- 15 October 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (8) , 4819-4821
- https://doi.org/10.1103/physrevb.30.4819
Abstract
A previously developed theory for electronic properties of doped semiconductors that uses a Hubbard-like Hamiltonian and takes into account the effect of disorder is applied to the impurity bands associated with inversion layers. It is shown that the impurity bands have a considerable bandwidth for concentrations in a range of experimental findings.Keywords
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