Optically controlled reflection modulator using GaAs–AlGaAs n-i-p-i/multiple-quantum-well structures
- 15 February 1989
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 14 (4) , 230-232
- https://doi.org/10.1364/ol.14.000230
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 14 references indexed in Scilit:
- Spatial light modulator and optical dynamic memory using a 6 × 6 array of self-electro-optic-effect devicesOptics Letters, 1988
- Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structureApplied Physics Letters, 1988
- Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structureElectronics Letters, 1987
- High-speed 2 × 2 electrically driven spatial light modulator made with GaAs/AlGaAs multiple quantum wells(MQWs)Electronics Letters, 1987
- Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switchesApplied Physics Letters, 1986
- Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rulesIEEE Journal of Quantum Electronics, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Novel hybrid optically bistable switch: The quantum well self-electro-optic effect deviceApplied Physics Letters, 1984