Recent developments in dry processing for very-large- scale integration
- 1 April 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 90 (3) , 259-270
- https://doi.org/10.1016/0040-6090(82)90375-3
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Edge Profiles in the Plasma Etching of Polycrystalline SiliconJournal of the Electrochemical Society, 1981
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Selective etching of SiO2 relative to Si by plasma reactive sputter etchingJournal of Vacuum Science and Technology, 1980
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- The role of chemisorption in plasma etchingJournal of Applied Physics, 1978
- Fabrication of deep square wave structures with micron dimensions by reactive sputter etchingApplied Physics Letters, 1978
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon GasesJapanese Journal of Applied Physics, 1974
- Application of RF Discharges to SputteringIBM Journal of Research and Development, 1970