Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 171-177
- https://doi.org/10.1016/0169-4332(89)90533-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Magnetic properties of rare earth disilicides RSi2Journal of the Less Common Metals, 1988
- Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2Journal of Applied Physics, 1987
- Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devicesJournal of Vacuum Science & Technology A, 1987
- Thin films of rare earth metal silicidesThin Solid Films, 1986
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Epitaxial silicidesThin Solid Films, 1982
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Contact reaction between Si and rare earth metalsApplied Physics Letters, 1981
- Epitaxial Relations in Films of Cr, Pt, and CrPt on SapphireJournal of the Electrochemical Society, 1979