High bond energy and thermomechanical stress in silicon on sapphire wafer bonding
- 2 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (22) , 2972-2974
- https://doi.org/10.1063/1.118760
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Direct bonding: retrospect and outlookPhilips Journal of Research, 1995
- Direct bonding of LiNbO3 single crystals for optical waveguidesApplied Physics Letters, 1995
- Double-fused 1.52-μm vertical-cavity lasersApplied Physics Letters, 1995
- Silicon‐on‐lnsulator Devices for High Voltage and Power IC ApplicationsJournal of the Electrochemical Society, 1994
- Bonded silicon-on-sapphire wafers and devicesJournal of Applied Physics, 1992
- Wafer bonding technology for silicon-on-lnsulator applications: A reviewJournal of Electronic Materials, 1992
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988