Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 160-170
- https://doi.org/10.1016/0169-4332(87)90089-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characterization of charge injection and trapping in scaled SONOS/MONOS memory devicesSolid-State Electronics, 1987
- A microcomputer-controlled multichannel programmable pattern generatorIEEE Transactions on Instrumentation and Measurement, 1987
- Amphoteric defects at the Si-SiO2 interfaceApplied Physics Letters, 1986
- Dangling Bonds in Memory‐Quality Silicon Nitride FilmsJournal of the Electrochemical Society, 1985
- Gap states in silicon nitrideApplied Physics Letters, 1984
- A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structuresIEEE Transactions on Electron Devices, 1983
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Two-band conduction of amorphous silicon nitridePhysica Status Solidi (a), 1974
- Site-binding model of the electrical double layer at the oxide/water interfaceJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1974
- Direct display of electron back tunneling in MNOS memory capacitorsApplied Physics Letters, 1973