Effect of oxygen injection during vpe growth of GaAs Films
- 1 September 1979
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 8 (5) , 555-570
- https://doi.org/10.1007/bf02657078
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- A study of deep impurity levels in GaAs due to Cr and O by ac photoconductivityJournal of Applied Physics, 1977
- On the role of silicon during growth of vpe GaAs-layersJournal of Electronic Materials, 1976
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaPJournal of the Electrochemical Society, 1972
- Thermodynamics of Ga-AsCl3-H2 system and dopant incorporationJournal of Crystal Growth, 1971
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- Residual Impurities in High-Purify Epitaxial GaAsJournal of the Electrochemical Society, 1970
- Nachweis und diffusion von Sauerstoff in GaAsSolid State Communications, 1969
- Deep Levels in Oxygen‐Grown n‐Type GaAsPhysica Status Solidi (b), 1969
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965