Deep Levels in Oxygen‐Grown n‐Type GaAs
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 31 (2) , K119-K122
- https://doi.org/10.1002/pssb.19690310250
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hall Effect and Mobility in n-Type GaAsPhysica Status Solidi (b), 1968
- Preparation of 0.5–103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystalsSolid State Communications, 1966
- Microwave oscillations in high-resistivity GaAsIEEE Transactions on Electron Devices, 1966
- Properties of Semi-Insulating GaAsJournal of Applied Physics, 1961
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960