A 780 nm high-power and highly reliable laser diode with a long cavity and a thin tapered-thickness active layer
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (11) , 1864-1872
- https://doi.org/10.1109/3.62105
Abstract
No abstract availableKeywords
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