Bipolar transistors for low noise, low temperature electronics
- 1 February 1990
- journal article
- Published by Elsevier in Cryogenics
- Vol. 30 (2) , 137-140
- https://doi.org/10.1016/0011-2275(90)90259-f
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyIEEE Electron Device Letters, 1988
- A low-noise amplifier for switched capacitor filtersIEEE Journal of Solid-State Circuits, 1982
- Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devicesElectronics Letters, 1979
- Direct Observation of the Structure of Thin, Commercially Useful Silicon on Sapphire Films by Cross Section Transmission Electron MicroscopyJournal of the Electrochemical Society, 1977