Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. II. Influence of Non-Exponential Transient on Determination of Deep Trap Parameters

Publisher Website
Google Scholar
Abstract
Computer simulation and experimental study on the influence of non-exponential current transient upon the determination of the trap-activation energies and the capture cross sections in PICTS have been performed. The condition of sampling times t 1 and t 2 (t 1<t 2) should not be such that t 1 is fixed and t 2 is varied since large errors are introduced into the obtained trap-parameters, while the condition that t 2/t 1 is fixed and both t 1 and t 2 are varied, should be used in order to minimize the errors. By using a computer controlled multi-channel PICTS system which has a large number of sampling gates, the experimental study on the influence of non-exponential transient upon PICTS in a high-resistivity bulk CdS single crystal has been made possible. The results obtained experimentally in the bulk CdS for the non-exponential case have been found to agree well with the predictions of the simulation.