A model for dark current and multiplication in HgCdTe avalanche photodiodes
- 1 June 2000
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 29 (6) , 823-827
- https://doi.org/10.1007/s11664-000-0231-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55μm photodetectionJournal of Crystal Growth, 1999
- MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectorsJournal of Electronic Materials, 1997
- Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structureJournal of Applied Physics, 1997
- Quasi-2D analysis of the effect of passivant on the performance of long-wavelength infrared HgCdTe photodiodesSemiconductor Science and Technology, 1996
- Thermal effects in Hg-diffused long-wave infrared HgCdTe photodiodesJournal of Applied Physics, 1992
- p-i-n HgCdTe photodiodes grown by molecular beam epitaxyApplied Physics Letters, 1991
- Intrinsic infrared detectorsProgress in Quantum Electronics, 1988
- Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off bandIEEE Transactions on Electron Devices, 1988
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Low dark current GaAlAsSb photodiodesApplied Physics Letters, 1982