Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures
- 26 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26) , 2701-2703
- https://doi.org/10.1063/1.101019
Abstract
Si/Si0.85Ge0.15/Si p‐type modulation‐doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm−3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze‐out behavior has been observed at low temperatures. The existence of two‐dimensional hole gas was determined by the tilted‐field Shubnikov–de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence‐band maximum of Si0.85Ge0.15 alloy has been estimated to be ≂0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si0.85Ge0.15 alloy, has been obtained for the heterostructure.Keywords
This publication has 13 references indexed in Scilit:
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- I n s i t u arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor depositionApplied Physics Letters, 1987
- Silicon molecular beam epitaxy: 1984–1986Journal of Crystal Growth, 1987
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °CApplied Physics Letters, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect TransistorsJapanese Journal of Applied Physics, 1982
- Comparison of Single and Multiple Period Modulation Doped AlxGa1-xAs/GaAs Heterostructures for FETsJapanese Journal of Applied Physics, 1982
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958