I n s i t u arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition
- 9 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1536-1538
- https://doi.org/10.1063/1.98627
Abstract
A comparison of in situ arsenic doping of epitaxial silicon films deposited at 800 °C by both very low pressure chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) is presented. The growth rate and morphology of films deposited by CVD are degraded in the presence of arsine. PECVD growth rates are insensitive to arsine. Moreover, PECVD deposits show an order of magnitude increase in active dopant incorporation and exhibit superior morphology relative to CVD.Keywords
This publication has 9 references indexed in Scilit:
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial qualityJournal of Applied Physics, 1987
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerationsJournal of Applied Physics, 1987
- Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface OptimizationJournal of the Electrochemical Society, 1986
- High Sensitivity, Dry‐Etch‐Resistant Negative EB ResistJournal of the Electrochemical Society, 1986
- Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process CharacterizationJournal of the Electrochemical Society, 1984
- Effect of Si-Ge buffer layer for low-temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor depositionJournal of Applied Physics, 1983
- P‐Doped Polysilicon Film Growth TechnologyJournal of the Electrochemical Society, 1982
- The Kinetics of Silicon Deposition on Silicon by Pyrolysis of SilaneJournal of the Electrochemical Society, 1974
- The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon filmsSurface Science, 1969