Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
- 1 September 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (9A) , L1133
- https://doi.org/10.1143/jjap.36.l1133
Abstract
GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550° C, and after annealing at 850° C for 10 min, the second buffer layer was deposited at 500° C. Then the GaN epitaxial layer was grown at 850° C. The X-ray full width at half maximum (FWHM) value of the obtained hexagonal GaN was smaller than that of a GaN epitaxial layer with a single buffer layer. The room temperature photoluminescence spectra exhibited a strong peak at approximately 361.5 nm.Keywords
This publication has 15 references indexed in Scilit:
- Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1996
- Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100) GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1996
- Metalorganic molecular beam epitaxy of cubic GaN on (100)GaAs substrates using triethylgallium and monomethylhydrazineJournal of Crystal Growth, 1995
- Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor depositionJournal of Electronic Materials, 1995
- New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH3)3Ga, HCl and NH3Japanese Journal of Applied Physics, 1995
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compoundsJournal of Crystal Growth, 1992
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam EpitaxyMRS Proceedings, 1989