Silicon surface roughness—Structural observation by reflection electron microscopy
- 24 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (12) , 779-781
- https://doi.org/10.1063/1.96719
Abstract
Surface roughness of polished silicon wafers was observed by reflection electron microscopy. Small steps were clearly resolved as fringe pattern, and rather rough steps of 1.2–1.6 nm in height and 200–500 nm in interval were observed as dark and bright bands. This is the first direct visualization of polished wafer surface roughness.Keywords
This publication has 8 references indexed in Scilit:
- Si/SiO2 interface roughness: Structural observations and electrical consequencesApplied Physics Letters, 1985
- Breakdown in silicon oxides (II)—correlation with Fe precipitatesApplied Physics Letters, 1985
- Direct Observation of AlxGa1-xAs/GaAs Superlattices by REMJapanese Journal of Applied Physics, 1984
- Breakdown in silicon oxides—correlation with Cu precipitatesApplied Physics Letters, 1984
- Reflection electron microscopy (REM) of fcc metalsUltramicroscopy, 1983
- Surface imaging of III–V semiconductors by reflection electron microscopy and inner potential measurementsThin Solid Films, 1983
- Image contrast of dislocations and atomic steps on (111) silicon surface in reflection electron microscopySurface Science, 1981
- Reflection electron microscopy of clean and gold deposited (111) silicon surfacesSurface Science, 1980