Structure and interface oxidation state of ZnO r.f. sputtered onto silicon and SiO2/Si
- 1 August 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 71 (1) , 23-32
- https://doi.org/10.1016/0040-6090(80)90179-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- XPS and Auger LMM analysis of ZnO/Si and ZnO/SiO2 interfacesSurface and Interface Analysis, 1979
- Integrated optical spectrum analyzer: an imminent `chip'IEEE Spectrum, 1978
- X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide FilmsIBM Journal of Research and Development, 1978
- Quantitative surface analysis by X-ray photoelectron spectroscopyApplications of Surface Science, 1978
- A monolithic zinc-oxide–on–silicon p-n-diode storage correlatorApplied Physics Letters, 1977
- ZnO/Si SAW convolver with surface-controlling junctionsApplied Physics Letters, 1977
- Studies of the optimum conditions for growth of rf-sputtered ZnO filmsJournal of Applied Physics, 1975
- Zinc-oxide–on–silicon acoustically scanned imager with positive sensitivity and storage capabilitiesApplied Physics Letters, 1975
- rf sputtering of ZnO shear-wave transducersJournal of Applied Physics, 1973