Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers
- 1 August 1993
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 57 (2) , 195-197
- https://doi.org/10.1007/bf00331444
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Structure and electrical properties of TiN/GaAs Schottky contactsApplied Physics Letters, 1988
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986
- TiN as a high temperature diffusion barrier for arsenic and boronThin Solid Films, 1984
- Stable ohmic contact to GaAs with TiN diffusion barrierThin Solid Films, 1984
- Characteristics of dc magnetron, reactively sputtered TiNx films for diffusion barriers in III–V semiconductor metallizationJournal of Vacuum Science & Technology A, 1984
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Thermal stability of titanium nitride for shallow junction solar cell contactsJournal of Applied Physics, 1981
- High-temperature contact structures for silicon semiconductor devicesApplied Physics Letters, 1980
- TiN as a diffusion barrier in the Ti-Pt-Au beam-lead metal systemThin Solid Films, 1979
- Diffusion barriers in thin filmsThin Solid Films, 1978