Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices

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Abstract
The local lattice strain around the channel in metal–oxide–semiconductor (MOS) field-effect transistors of 0.1 μm gate length was measured by using convergent-beam electron diffraction. It was found that the normal strain along the gate-length direction is compressive beneath the gate and is larger for devices having smaller diffusion sizes in the gate length direction L′. The drive current Ion decreased for an n-channel MOS and increased for a p-channel MOS as L′ decreased. These results are consistent with those of a previous study. However, our results also revealed that the strain distribution around the channel region was strongly affected not only by the stress from the shallow trench isolation but also by the device structures around the gate.