Effect of substrate position in i-ZnO thin-film formation to Cu(In,Ga)Se2 solar cell
- 1 September 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 20 (5) , 1755-1758
- https://doi.org/10.1116/1.1502696
Abstract
Intrinsic ZnO (i-ZnO) thin films were prepared by rf magnetron sputtering of nondoped ZnO targets in Ar gas under various substrate positions and they were applied to solar cells. We have characterized i-ZnO thin films and investigated the solar cell performance. The resistivity and the full width at half maximum (FWHM) in the x-ray diffraction peak were changed, depending on the substrate position. The performance of solar cells was correspondent to the change of the resistivity and the FWHM of the i-ZnO thin films.Keywords
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