Untersuchung von AIIIB‐Halbleitereinkristallen mittels Rutherford‐Rückstreuung energiereicher Protonen
- 1 January 1975
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 10 (11) , 1115-1133
- https://doi.org/10.1002/crat.19750101104
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Anwendung der Protonen‐Rückstreuanalyse zur Bestimmung der Zusammensetzung von AIIIBV‐MischkristallenCrystal Research and Technology, 1975
- The influence of the crystal lattice on the angular distribution of X-rays emitted from a GaP single crystal by fast proton bombardmentPhysica Status Solidi (a), 1974
- Ion implantation doping of compound semiconductorsPhysica Status Solidi (a), 1973
- Calculations on axial dechannelingRadiation Effects, 1972
- Kernphysikalische Methoden in der Kristallographie und FestkörperphysikCrystal Research and Technology, 1972
- Alloying Behavior of Au and Au–Ge on GaAsJournal of Applied Physics, 1971
- Monte Carlo Channeling CalculationsPhysical Review B, 1971
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970
- Proton Blocking in Cubic CrystalsJournal of Applied Physics, 1968
- Influence of the crystal lattice on some atomic and nuclear processesUspekhi Fizicheskih Nauk, 1965