CF3, CF2and CF Radical Measurements in RF CHF3Etching Plasma Using Infrared Diode Laser Absorption Spectroscopy
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S)
- https://doi.org/10.1143/jjap.33.4298
Abstract
We have measured the characteristics of CF3, CF2and CF radical densities in RF CHF3etching plasma under the same condition using infrared diode laser absorption spectroscopy, for the first time. The CFxradical density measurements have been performed as a function of input RF power, CHF3gas pressure and distance from the RF electrode. On the basis of these systematic measurements, the generation and loss processes of CFxradicals in RF CHF3plasma were discussed.Keywords
This publication has 18 references indexed in Scilit:
- Measurements of neutral species in low pressure C2F6 discharges using diode laser absorption spectroscopyJournal of Vacuum Science & Technology A, 1993
- Measurements of the CF, CF2 and CF3 Radicals in a CHF3 Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1993
- Spatial Distribution and Surface Loss of CF3 and CF2 Radicals in a CF4 Etching PlasmaJapanese Journal of Applied Physics, 1993
- Measurement of the CF3radical using infrared diode laser absorption spectroscopyJournal of Physics D: Applied Physics, 1993
- Measurements of the CF Radical in DC Pulsed CF4/H2 Discharge Plasma Using Infrared Diode Laser Absorption SpectroscopyJapanese Journal of Applied Physics, 1990
- Reaction probability for the spontaneous etching of silicon by CF3 free radicalsJournal of Vacuum Science & Technology B, 1988
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983
- Infrared diode laser spectroscopy of the CF radicalJournal of Molecular Spectroscopy, 1981
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975