Characterization of impact-ionization in InAlAs/InGaAs/InP HEMT structures using a novel photocurrent-measurement technique
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On the optimization and reliability of ohmic and Schottky contacts to InAlAs/InGaAs HFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTsIEEE Photonics Technology Letters, 1992
- Empirical fit to band discontinuities and barrier heights in III–V alloy systemsApplied Physics Letters, 1992
- Control of gate leakage in InAlAs/InGaAs HEMTsElectronics Letters, 1991
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991