Statistical characterization of the self-induced intensity modulation exhibited by AlGaAs junction lasers with proton stripes
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5) , 438-440
- https://doi.org/10.1063/1.91730
Abstract
Results of a statistical study of the self‐induced modulation present in the intensity emitted by stripe‐geometry (AlGa)As junction lasers are reported. The data indicate that narrowing the width of the proton‐delineated stripe from 12 to 8 μm substantially reduces the fraction of unaged lasers with modulation depths greater than about 40% and increases the minimum frequency at which self‐induced intensity modulation occurs. Further analysis of the statistical data also suggests that the epi‐growth system can play a significant role in determining the statistical distribution of the self‐induced modulation depth.Keywords
This publication has 10 references indexed in Scilit:
- Stabilization of aging-induced self-pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatingsApplied Physics Letters, 1979
- Near-threshold behavior of the intrinsic resonant frequency in a semiconductor laserIEEE Journal of Quantum Electronics, 1979
- A possible model for sustained oscillations (pulsations) in (Al,Ga)As double-heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasersIEEE Journal of Quantum Electronics, 1978
- Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasersIEEE Journal of Quantum Electronics, 1977
- Experimental Fiber-Optic Transmission System for Interoffice TrunksIEEE Transactions on Communications, 1977
- Changes in the optical properties of CW (AlGa)As junction lasers during accelerated agingIEEE Journal of Quantum Electronics, 1977
- Nonlinearities in the emission characteristics of stripe-geometry (AlGa)As double-heterostructure junction lasersIEEE Journal of Quantum Electronics, 1976
- Carrier and gain spatial profiles in GaAs stripe geometry lasersJournal of Applied Physics, 1973
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972