Ta-Si-N as a diffusion barrier between Cu and Si
- 1 November 1998
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 57 (1) , 17-22
- https://doi.org/10.1016/s0254-0584(98)00176-x
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Tantalum-based diffusion barriers in Si/Cu VLSI metallizationsJournal of Applied Physics, 1991
- Sputtered Ta-Si-N diffusion barriers in Cu metallizations for SiIEEE Electron Device Letters, 1991
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984