A vertical-cavity surface-emitting laser appliqued to a 0.8-μm NMOS driver
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (7) , 869-871
- https://doi.org/10.1109/68.593327
Abstract
An optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface-emitting laser (VCSEL) appliqued to an NMOS drive circuit was fabricated to form an optical link from the CMOS chip. A custom NMOS circuit was designed and fabricated through the MOSIS foundry service in a standard 0.8-/spl mu/m CMOS process. InGaAs quantum-well VCSELs were grown, fabricated and tested on an n-type GaAs substrate. Next, the VCSELs underwent a substrate removal technique and were appliqued to the NMOS circuitry. The OEIC was tested at the chip level and showed an electrical to optical conversion efficiency of 1.09 mW/V. Modulation results are also discussed.Keywords
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