Thermodynamic analysis of the deposition of GaAs epitaxial layers prepared by the MOCVD method
- 30 June 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (2-3) , 437-444
- https://doi.org/10.1016/0022-0248(91)90320-5
Abstract
No abstract availableKeywords
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