Beam-induced impurity displacement during channelling measurements on phosphorus diffused silicon
- 16 April 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (2) , K171-K175
- https://doi.org/10.1002/pssa.2210220259
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- On the nature of the kink in the carrier profile for phosphorus-diffused layers in siliconApplied Physics Letters, 1972
- Beam Effects in the Analysis of As-Doped Silicon by Channeling MeasurementsApplied Physics Letters, 1972
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Shallow phosphorus diffusion profiles in siliconProceedings of the IEEE, 1969
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy PairsPhysical Review B, 1968
- Precipitates Formed by High-Concentration Phosphorus Diffusion in SiliconJournal of Applied Physics, 1968
- Control of diffusion induced dislocations in phosphorus diffused siliconSolid-State Electronics, 1966
- Diffusion of Phosphorus into SiliconJournal of the Physics Society Japan, 1962